Contamination in an experimental gallium arsenide etch system
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<subfield code="a">Contamination in an experimental gallium arsenide etch system</subfield>
<subfield code="c">J. Ruuskanen... [et al.]</subfield>
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<subfield code="a">A study in a university setting was undertaken on the by-products which accumulated within a plasma etching reactor system from two years of sporadic dry etching of gallium arsenide wafers. The deposits on the reactor chamber walls, in the vacuum pump oil and its filter, in the oil mist eliminator, and in the exhaust charcoal canister were analyzed for 33 elements by simultaneous inductively coupled plasma atomic emission spectroscopy</subfield>
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<subfield code="g">Vol. 51, nº 1, January 1990 ; p. 8-13</subfield>
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