Centro de Documentacion de Fundación MAPFRE - Contamination in an experimental gallium arsenide etch system

Notas: Sumario: A study in a university setting was undertaken on the by-products which accumulated within a plasma etching reactor system from two years of sporadic dry etching of gallium arsenide wafers. The deposits on the reactor chamber walls, in the vacuum pump oil and its filter, in the oil mist eliminator, and in the exhaust charcoal canister were analyzed for 33 elements by simultaneous inductively coupled plasma atomic emission spectroscopyRegistros relacionados: En: American Industrial Hygiene Association journal. - Akron, Ohio. - Vol. 51, nº 1, January 1990 ; p. 8-13Materia / lugar / evento: Higiene industrial Contaminantes químicos Control de contaminantes Arsénico Arseniuro de galio Muestreos Métodos de análisis Espectroscopia de absorción atómica Riesgo laboral Otros autores: Ruuskanen, J.
Títulos secundarios: Título: American Industrial Hygiene Association journal
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